TSV is composed of a conductor, crossing the Si Subtrate of the stacked dies. This conductor is electrically insulated from the substrate by a dielectric and connects the metal wires of the stacked dies.
Cross Section of TSV:
Advantages of TSV technology:
TSV technology uses vertical interconnections (where as 2D IC's use only horizental interconnects). As it use small area of 3D ICS's leading to shorter wirelength than 2D IC's because gates can be placed on top of each other in different dies, eliminating the need of long chip interconnects existing in 2-D IC's.
- Greater density for the same footprint
- More functionality
- Higher performance
- Lower power consumption
- Lower cost
- More manufacturing flexibility
- Faster time to market
TSV among different dies:
How to exhaust the heat from Die2 ??
ReplyDeleteDue the heat produced in Die2 Die1 and Die3 may get damaged.!
Connections from the bumps is possible only from top and bottom dies.!
Yes ur right, but this can be resolved by inserting a die with an architecture to cool in between 2 dies. TSV enable to take the bump at bottom & top of the STACK but the connection to that bump may come from any die (die1/die2/die3). The Main advantage is with out increasing area of the chip we can include more logic, this will be help full to computer & Mobile applications
ReplyDelete